| 内容提要: |
In graphene field effect transistors, gate voltage-controlled quantum capacitance and channel resistance play an important role in its performances. In this paper, we experimentally verified that the output phase with respect to the input phase of GFETs change under the influence of quantum capacitance and channel resistance, which are controlled by the gate voltage. This phenomenon is theoretically analyzed and a model is established to simulate the phase shift. The results show that the simulation results of the model are in good agreement with the experimental results. This work reveals the phase characteristics of GFETs and provides a research basis for the application of GFETs in phase shifter and modulator. |