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Switch large signal model plays the lead in switch and Voltage Variable Attenuator (VVA) design, which can predict the power capacity and variable attenuation range. However, the HEMT large signal models in mainstream commercial microwave simulation software are usually designed for common-source amplifiers, not suitable for switch and VAA circuits. In this study, a new GaN-based dual-gate Switch HEMT large signal model is developed. The complete topology of this model contains two intrinsic single-gate switch HEMT model “core” and external parasitic parameters. Instead of a constant in the basic Angelov model, the proposed model employ a polynomial function to accurately fit the drain-source capacitance in switch operation area. Meanwhile, a 0.1 to 20GHz frequency ranged GaN HEMT VAA is also designed and manufactured to evaluate the model’s accuracy and convergency.
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